This paper discusses the effect of proton radiation on the device performance of antimony chalcogenide solar cells. Sb2S3 and Sb2(S, Se)3 solar cells are exposed to two different proton energies (100 and 300 keV) with fluences ranging from 1011 to 1014 protons/cm2. The results suggest that antimony chalcogenide solar cells exhibit superior radiation tolerance compared with conventional space photovoltaic technologies.
Antimony chalcogenide-based thin-film solar cells have received immense attention for terrestrial and space photovoltaic (PV) applications due to their excellent optoelectronic properties, ease of synthesis, low manufacturing costs, and material robustness. To utilize solar cells for space power applications, studying their proton radiation hardness is pivotal. In this work, the effect of proton radiation on the device performance of antimony chalcogenide solar cells is studied. Devices are exposed to protons with two different energies (100 and 300 keV) for four fluences (1011 to 1014 protons/cm2), and their current density–voltage (JV) characteristics and external quantum efficiency before and after radiation are measured to assess their radiation tolerance. Antimony chalcogenide solar cells exhibit superior radiation robustness compared with state-of-the-art III–V devices, retaining higher remaining factors of JV characteristic parameters after being exposed to displacement damage dose of up to 1013 MeV/g. End-of-life simulations reveal the potential of antimony chalcogenide-based solar cells for space PV applications in high-proton-exposure environments.
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